
A semiconductor is comprehensively characterized today as a substance whose electrical conductivity can be manipulated at will, utilizing various methods. Put simply, any material capable of fulfilling the role of a transistor falls under the category of semiconductors.
Utilizations of Power Semiconductors
Incorporated within power systems, either as standalone components or as components within Power Integrated Circuits (PICs), exist three fundamental types of power switches: Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), and Bipolar Junction Transistors (BJTs). Date of reference: 21st January, 2020.
Installed within the power supplies of diverse devices, power semiconductors effectively transform the alternating current (AC) electricity, typically supplied as 100V or 200V from outlets, into direct current (DC). This conversion process subsequently facilitates the adjustment of the DC voltage to the specific requirements of each individual piece of equipment.
The activation of power switching mechanisms within any type of semiconductor devices is facilitated by a significant enhancement in the conductivity of a specific region that, in its inactive state, exhibits a substantial resistance, thereby preventing the transmission of an external potential to the device.
What constitutes a p-type Semiconductor? It refers to an intrinsic semiconductor that undergoes the process of doping with either boron (B) or indium (In) atoms. Within this context, silicon, a Group IV element, naturally possesses four valence electrons, whereas boron, belonging to Group III, carries three valence electrons.
The prevalent semiconductor materials that are widely utilized include silicon, germanium, and gallium arsenide.
Innovative semiconductor materials, encompassing silicon carbide (SiC) and gallium nitride (GaN), are now being embraced to tackle the prevailing challenge, resulting in devices that exhibit heightened efficiency and power density, albeit accompanied by a more intricate design landscape. January 24th, 2024.
Hence, n-type semiconducting materials display enhanced electrical conductivity in contrast to their intrinsic counterparts. The inclusion of additional electrons modifies the energy band configuration and alters the Fermi energy, resulting in a closer proximity of the Fermi level to the conduction band.
Wide bandgap (WBG) semiconductors, inclusive of silicon carbide (SiC), gallium nitride (GaN), and diamond (Dia), possess distinct advantages over traditional silicon (Si) semiconductors, rendering them highly suitable for power conversion applications.
According to researchers at MIT, cubic boron arsenide has been identified as an unparalleled semiconductor material, potentially the finest yet discovered, as of July 21st, 2022.